2N3906BU: PNP Silicon Transistor, VCEO 40V, IC 200mA, TO-92
onsemi

The 2N3906BU, manufactured by onsemi, is a PNP silicon transistor encapsulated in a TO-92 package. This component is designed for general-purpose applications, featuring a collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) capability of up to 200mA. It operates efficiently within a junction temperature range of -55 to +150°C, making it suitable for a wide range of environmental conditions.

The transistor exhibits a collector-base voltage (VCBO) of 40V and an emitter-base voltage (VEBO) of 5.0V. Its total device dissipation at 25°C is rated at 625mW, with a derating above 25°C of 5.0mW/°C. For applications requiring higher power dissipation, the device can dissipate up to 1.5W at a case temperature (TC) of 25°C, with a derating of 12mW/°C above this temperature. These characteristics make the 2N3906BU a versatile component for various electronic circuits.

Key Specifications and Features

  • Collector-Emitter Voltage (VCEO): 40V
  • Collector-Base Voltage (VCBO): 40V
  • Emitter-Base Voltage (VEBO): 5.0V
  • Collector Current - Continuous (IC): 200mA
  • Total Device Dissipation (@ TA = 25°C): 625mW
  • Operating and Storage Junction Temperature Range (TJ, Tstg): -55 to +150°C
  • Thermal Resistance, Junction-to-Ambient (RΘJA): 200°C/W
  • Thermal Resistance, Junction-to-Case (RΘJC): 83.3°C/W

2N3906BU Datasheet

2N3906BU datasheet (PDF)

2N3906BU Substitutes
Equivalent alternate parts that may serve as a substitute for 2N3906BU, most popular parts first

Applications

  • Signal amplification
  • Switching applications
  • Audio amplifiers

Category

Transistors

General information

Transistors are fundamental components in electronic circuits, acting as switches or amplifiers. They control the flow of electrical current in a circuit and are essential in creating functional electronic devices. When selecting a transistor, considerations include the type (PNP or NPN), maximum ratings (such as collector-emitter voltage, collector current), power dissipation, and package type.

PNP transistors, like the 2N3906BU, are a type of bipolar junction transistor (BJT) that use holes as the majority charge carriers. They are commonly used in signal amplification and switching applications. The collector-emitter voltage, collector current, and power dissipation ratings are important parameters that determine the transistor's suitability for a particular application. Additionally, the thermal characteristics, such as thermal resistance, are crucial for ensuring the device operates within safe temperature ranges.

In applications, PNP transistors are often found in complementary pairs with NPN transistors to create push-pull amplifier configurations, offering benefits in terms of power efficiency and signal integrity. Understanding the electrical characteristics and performance metrics of the transistor is essential for integrating it effectively into electronic circuits.

Finally, the packaging of a transistor, such as the TO-92 for the 2N3906BU, affects its thermal dissipation capabilities and how it can be mounted on a circuit board. Engineers should consider the physical dimensions and mounting style of the transistor to ensure compatibility with the intended application and circuit design.

PartsBox Popularity Index

  • Business: 2/10
  • Hobby: 8/10

Electronic Component Database

Popular electronic components