BS170: N-Channel MOSFET, 60V, 500mA, TO-92/SOT-23
onsemi

The BS170 is an N-Channel MOSFET produced using onsemi's proprietary high cell density DMOS technology. This component is designed to offer low on-state resistance while ensuring rugged, reliable, and fast switching performance. It is capable of handling up to 500 mA of continuous drain current, making it suitable for a wide range of applications, particularly those requiring low voltage and low current. Examples include small servo motor control, power MOSFET gate drivers, and various switching applications.

Featuring a high-density cell design, the BS170 provides a low RDS(ON), which is beneficial for applications requiring efficient power management. Its high saturation current capability and voltage-controlled small signal switch functionality make it a versatile choice for designers. Additionally, the BS170 is characterized as rugged and reliable, with high saturation current capability, making it a solid choice for demanding environments.

Key Specifications and Features

  • Drain-Source Voltage (VDSS): 60V
  • Gate-Source Voltage (VGSS): ±20V
  • Drain Current - Continuous (ID): 500mA
  • Drain Current - Pulsed: 1200mA (BS170), 800mA (MMBF170)
  • Static Drain-Source On-Resistance (RDS(ON)): 1.2Ω to 5Ω
  • Gate Threshold Voltage (VGS(th)): 0.8V to 3V
  • Maximum Power Dissipation: 830mW (BS170), 300mW (MMBF170)
  • Operating and Storage Temperature Range: -55°C to 150°C

BS170 Datasheet

BS170 datasheet (PDF)

Applications

  • Small servo motor control
  • Power MOSFET gate drivers
  • Various switching applications

Category

Transistor

General information

Field Effect Transistors (FETs) like the BS170 are semiconductor devices widely used in electronics for switching and amplifying signals. The N-Channel MOSFET, a type of FET, is designed to conduct current between the drain and source terminals when a positive voltage is applied to the gate terminal. This makes N-Channel MOSFETs ideal for high-efficiency switching applications.

When selecting an N-Channel MOSFET, engineers should consider parameters such as drain-source voltage (VDSS), gate-source voltage (VGSS), drain current, and static drain-source on-resistance (RDS(ON)). These parameters determine the MOSFET's ability to handle the voltages and currents in a given application, as well as its efficiency and thermal performance.

The BS170, with its low RDS(ON) and high saturation current capability, is particularly suited for low voltage, low current applications. Its rugged and reliable design ensures stable performance under varying conditions. Engineers should also consider the thermal characteristics of the MOSFET, including maximum power dissipation and thermal resistance, to ensure reliable operation within the specified temperature range.

In summary, the BS170 N-Channel MOSFET offers a balance of performance, reliability, and efficiency, making it an attractive option for a variety of applications. Its selection should be based on a thorough evaluation of the application's electrical and thermal requirements.

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