RBR2MM40CTFTR: Schottky Barrier Diode, PMDU, 40V, 2A, Low VF
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The RBR2MM40CTFTR Schottky Barrier Diode is designed for general rectification purposes, offering a compact solution with its small power mold PMDU package. This diode is characterized by its high reliability and low forward voltage (VF), making it suitable for applications requiring efficient voltage rectification with minimal power loss.

Its construction is based on silicon epitaxial planar technology, which contributes to its stable performance and durability. The diode supports a repetitive peak reverse voltage (VRM) of 40V and can handle an average forward rectified current (IF) of 2A, with a maximum forward surge current (IFSM) of 30A. The operating junction temperature range is from -55°C to 150°C, accommodating various environmental conditions.

Key Specifications and Features

  • Package: PMDU (SOD-123FL)
  • Repetitive Peak Reverse Voltage (VRM): 40V
  • Average Forward Rectified Current (IF): 2A
  • Forward Voltage (VF): Maximum 0.54V
  • Reverse Current (IR): Maximum 100µA
  • Non-repetitive Forward Current Surge Peak (IFSM): 30A
  • Operating Junction Temperature (Tj): -55°C to 150°C

RBR2MM40CTFTR Substitutes
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Applications

  • General rectification

Category

Diode

General information

Schottky barrier diodes are semiconductor devices that are widely used in electronic circuits for rectification, voltage clamping, and as protection diodes due to their low forward voltage drop and fast switching capabilities. They are particularly useful in applications requiring high efficiency and speed, such as power supplies, DC-DC converters, and radio frequency (RF) systems.

When selecting a Schottky diode, important parameters to consider include the maximum repetitive peak reverse voltage, average forward current, forward voltage drop, and power dissipation capabilities. The package type and thermal characteristics are also critical factors that affect the diode's performance and suitability for specific applications.

Schottky diodes offer the advantage of a lower forward voltage drop compared to conventional PN junction diodes, which results in less power loss and higher efficiency. However, they typically have higher reverse leakage currents, which may be a consideration in some applications. The choice of diode will depend on the specific requirements of the application, including the operating voltage, current levels, switching speed, and thermal constraints.

In addition to technical specifications, the reliability and quality of the diode are essential for ensuring stable and long-term operation in various applications. Manufacturers often provide detailed datasheets and application notes to assist engineers in selecting the appropriate diode for their needs.

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