The BSS138 is an N-Channel enhancement mode Field Effect Transistor (FET) produced using onsemi's proprietary, high cell density, DMOS technology. This technology enables the BSS138 to achieve low on-state resistance while maintaining rugged, reliable, and fast switching performance. The device is optimized for low voltage, low current applications, making it suitable for small servo motor control, power MOSFET gate drivers, and other switching applications.
Featuring a compact industry-standard SOT-23 surface-mount package, the BSS138 is designed to minimize on-state resistance, with values of 3.5Ω at VGS = 10V and 6.0Ω at VGS = 4.5V. This low on-state resistance is achieved through onsemi's high-density cell design, contributing to the device's efficiency in its applications. Furthermore, the BSS138 is characterized by its ruggedness and reliability, ensuring performance in a variety of operating conditions.
The device is also noted for being Pb-free and Halogen-free, aligning with current environmental standards for electronic components. This makes the BSS138 an environmentally friendly choice for engineers looking to design sustainable products.
Transistor
Field Effect Transistors (FETs) are a type of transistor used in electronic circuits to control the flow of current. They are key components in a wide range of applications, from power management to signal amplification. FETs operate by using an electric field to control the shape and hence the conductivity of a 'channel' in a semiconductor material. This allows for the efficient switching and amplification of electronic signals.
When selecting a FET for a particular application, several parameters are important to consider. These include the drain-source voltage, which indicates the maximum voltage the FET can handle between its drain and source terminals; the gate-source voltage, which is the voltage difference required at the gate to make the FET conductive; and the drain current, which is the maximum current that can flow through the FET. The on-state resistance is also crucial, as it affects the FET's efficiency by determining how much power is lost in the form of heat when the FET is conducting.
N-Channel FETs, like the BSS138, are particularly suited for applications requiring efficient power management and switching. They are typically used in low voltage, low current applications due to their ability to efficiently control the flow of current with minimal power loss. When choosing an N-Channel FET, engineers must consider the device's voltage and current ratings, on-state resistance, switching speed, and thermal performance to ensure it meets the requirements of their application.
The BSS138, with its low on-state resistance and high-density cell design, is an example of an N-Channel FET designed for efficient performance in low voltage, low current applications. Its compact SOT-23 package and rugged, reliable performance make it suitable for a wide range of applications, including motor control and power switching.