BSS138LT1G: N-Channel Power MOSFET, 200mA, 50V, SOT-23 package
onsemi

The BSS138LT1G from onsemi is an N-Channel Power MOSFET designed for efficient power management in portable and battery-powered devices. It operates at a maximum continuous drain current of 200mA and a drain-to-source voltage of 50V. The component's low threshold voltage (0.85V to 1.5V) makes it suitable for low voltage applications, enhancing its utility in modern electronic circuits.

This MOSFET comes in a compact SOT-23 package, optimizing board space in densely packed designs. It is characterized by a static drain-to-source on-resistance of 3.5Ω (at VGS = 5.0V, ID = 200mA), ensuring efficient operation. The device also features fast switching characteristics, with turn-on and turn-off delay times typically around 20ns, contributing to its performance in high-speed switching applications.

Key Specifications and Features

  • Drain-to-Source Voltage (VDSS): 50V
  • Continuous Drain Current (ID): 200mA
  • Pulsed Drain Current (IDM): 800mA
  • Static Drain-to-Source On-Resistance (rDS(on)): 3.5Ω
  • Gate-Source Threshold Voltage (VGS(th)): 0.85V to 1.5V
  • Total Power Dissipation (PD): 225mW
  • Operating and Storage Temperature Range: -55°C to 150°C
  • Thermal Resistance, Junction-to-Ambient (RθJA): 556°C/W

BSS138LT1G Datasheet

BSS138LT1G datasheet (PDF)

BSS138LT1G Substitutes
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Applications

  • DC-DC converters
  • Power management in portable devices
  • Battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones

Category

MOSFET

General information

Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs) are a type of transistor used for amplifying or switching electronic signals. They are an essential component in modern electronic circuits, offering high input impedance and fast switching speeds. N-Channel MOSFETs, such as the BSS138LT1G, are typically used for switching electronic signals in the negative (or 'sink') direction.

When selecting a MOSFET for a design, several parameters are important to consider, including the drain-to-source voltage (VDSS), drain current (ID), and static drain-to-source on-resistance (rDS(on)). These parameters determine the MOSFET's ability to handle the required power levels and efficiency of the circuit. Additionally, the gate-source threshold voltage (VGS(th)) is crucial for determining how easily the MOSFET can be turned on at a given gate voltage, affecting the device's suitability for low voltage applications.

MOSFETs are widely used in applications ranging from power management and conversion to signal switching. Their ability to efficiently control high currents and voltages with minimal input power makes them indispensable in modern electronic devices. The choice of packaging, such as the SOT-23 package for the BSS138LT1G, also plays a significant role in the application, affecting factors such as thermal performance and board space utilization.

In summary, when choosing a MOSFET, it is important to closely match the component's specifications with the application's requirements. This includes considering the operating environment, as temperature and thermal management can significantly impact the MOSFET's performance and reliability.

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