2N7002,215: 60V, 300mA N-channel Trench MOSFET, Fast Switching, SOT23
Nexperia

The 2N7002,215 by Nexperia is an N-channel enhancement mode Field-Effect Transistor (FET) that utilizes Trench MOSFET technology, encapsulated in a plastic, surface-mounted SOT23 package. This component is designed to offer efficient performance in various electronic circuits by enabling very fast switching capabilities. The use of Trench MOSFET technology not only enhances the device's performance but also contributes to its reliability and durability over time.

Key features of the 2N7002,215 include its suitability for logic level gate drive sources, indicating its ability to operate at lower voltage levels commonly found in digital circuits. This characteristic, combined with its fast switching speed, makes it an excellent choice for high-speed switching applications. The component is encapsulated in a SOT23 package, a compact form factor that facilitates easy integration into a wide range of electronic devices.

Key Specifications and Features

  • Drain-Source Voltage (VDS): 60V
  • Drain Current (ID): 300mA
  • Total Power Dissipation (Ptot): 0.83W
  • Drain-Source On-State Resistance (RDSon): 2.8 to 5Ω
  • Gate-Source Voltage (VGS): ±30V, Peak ±40V
  • Junction Temperature (Tj): -65 to 150°C
  • Package: SOT23

2N7002,215 Datasheet

2N7002,215 datasheet (PDF)

2N7002,215 Substitutes
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Applications

  • Logic level translators
  • High-speed line drivers

Category

Transistor

General information

Field-Effect Transistors (FETs) are a type of transistor that controls the flow of electricity using an electric field. They are key components in various electronic circuits, including amplifiers, oscillators, and switches. N-channel MOSFETs, such as the 2N7002,215, are particularly useful for switching and amplifying signals in electronic devices.

When selecting a FET for a specific application, it's important to consider factors such as the drain-source voltage, drain current, power dissipation, and switching speed. The packaging of the FET also plays a crucial role, especially in compact or surface-mounted designs. Trench MOSFET technology, as used in the 2N7002,215, offers improved performance by reducing on-state resistance and enhancing switching speed.

For applications requiring fast switching and low power loss, N-channel MOSFETs like the 2N7002,215 are ideal. Their ability to operate at logic level gate drive voltages makes them suitable for interfacing with microcontrollers and other digital logic circuits. Furthermore, the compact SOT23 package allows for efficient use of space in PCB design.

In summary, when choosing a MOSFET, engineers should carefully evaluate the component's specifications against the requirements of their application. The 2N7002,215 offers a balanced combination of performance, reliability, and ease of integration, making it a versatile choice for a wide range of electronic designs.

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