PMV55ENEAR: 60V, N-channel Trench MOSFET, SOT23, Logic Level, Fast Switching

Nexperia

The Nexperia PMV55ENEA is a 60V, N-channel enhancement mode Field-Effect Transistor (FET) employing Trench MOSFET technology. Packaged in a compact SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, it is designed for high-density PCB applications. This MOSFET is notable for its logic level compatibility, enabling it to be driven directly by logic circuits without the need for additional gate drivers.

Featuring very fast switching capabilities, the PMV55ENEA is ideal for high-speed switching applications. It also includes built-in ElectroStatic Discharge (ESD) protection exceeding 2 kV HBM, enhancing its robustness in sensitive environments. Furthermore, it is AEC-Q101 qualified, making it suitable for automotive applications where reliability is paramount.

• Drain-Source Voltage (VDS): 60V
• Gate-Source Voltage (VGS): ±20V
• Drain Current (ID): 3.1A at VGS = 10V, 25°C
• Drain-Source On-State Resistance (RDSon): 46 to 60mΩ at VGS = 10V, ID = 3.1A, 25°C
• Total Gate Charge (QG(tot)): 12.7 to 19nC
• Static Drain-Source Breakdown Voltage (V(BR)DSS): 60V
• Gate-Source Threshold Voltage (VGSth): 1.3 to 2.7V

• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits

N-channel MOSFETs are a type of Field-Effect Transistor (FET) that are widely used in electronic circuits for switching and amplifying signals. They operate by using an electric field to control the flow of current between the source and drain terminals. N-channel refers to the type of charge carrier (electrons) that flow through the device.

When selecting an N-channel MOSFET, key considerations include the drain-source voltage (VDS), gate-source voltage (VGS), drain current (ID), and the drain-source on-state resistance (RDSon). These parameters determine the MOSFET's ability to handle voltage and current levels, as well as its efficiency and speed in switching applications.

MOSFETs are essential components in a wide range of applications, from power management and conversion to signal processing. The choice of MOSFET technology, such as Trench MOSFET, influences the device's performance characteristics, including switching speed, on-state resistance, and robustness against overvoltages.

For engineers, understanding the specific requirements of their application is crucial in selecting the appropriate MOSFET. This includes considering the operating environment, such as temperature ranges and the presence of potential electrostatic discharges, which could impact the MOSFET's performance and reliability.