The 2N7002LT3G is an N-Channel MOSFET from onsemi, designed for small signal applications and housed in a compact SOT-23 package. This component offers a drain-source voltage (VDSS) of 60V and a maximum drain current (ID) of 115mA, making it suitable for a variety of low-power applications. It is characterized by its low on-state resistance and high-speed switching capabilities. The device is AEC-Q101 qualified, making it suitable for automotive applications, and it is also Pb-Free, Halogen Free/BFR Free, and RoHS compliant, reflecting onsemi's commitment to environmental sustainability.
The MOSFET features a maximum RDS(on) of 7.5Ω at 10V, indicating its efficiency in conducting current with minimal power loss. It also supports a pulsed drain current (IDM) of up to 800mA, allowing for transient higher current operations. The device's thermal characteristics ensure reliable operation, with a maximum junction temperature of 150°C. Its dynamic characteristics include an input capacitance (Ciss) of 50pF, making it responsive in high-speed switching applications.
MOSFET
MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are a type of transistor used for amplifying or switching electronic signals. They are characterized by their gate, drain, and source terminals. N-Channel MOSFETs, such as the 2N7002LT3G, conduct current when a positive voltage is applied to the gate relative to the source, making them suitable for a variety of switching applications.
When selecting a MOSFET for a specific application, engineers consider parameters such as drain-source voltage (VDSS), drain current (ID), gate-source voltage (VGS), and static drain-source on-state resistance (RDS(on)). These parameters determine the MOSFET's ability to handle voltage and current, its efficiency, and its suitability for high-speed switching applications. Thermal characteristics are also important, as they affect the device's reliability and longevity under different operating conditions.
MOSFETs are widely used in power management circuits, motor control systems, and in the switching of loads in various electronic devices. Their ability to switch rapidly and with high efficiency makes them valuable in reducing power consumption and heat generation in electronic systems. Additionally, the choice between N-Channel and P-Channel MOSFETs depends on the specific requirements of the circuit, including the direction of current flow and the type of load being driven.
Overall, the selection of a MOSFET involves a careful analysis of its electrical characteristics, thermal performance, and the specific requirements of the application. Reliability, efficiency, and compliance with environmental standards are also key considerations in the selection process.