PMV164ENEAR: 60 V, N-channel Trench MOSFET, SOT23 package, Logic-level compatible

Nexperia

The PMV164ENEAR is an N-channel enhancement mode Field-Effect Transistor (FET) that utilizes Trench MOSFET technology. It is encapsulated in a compact SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for a wide range of applications where space is at a premium. This component is designed to operate at logic levels, making it compatible with modern microcontroller interfaces.

Key features of the PMV164ENEAR include an extended operating temperature range of up to 175°C and built-in ElectroStatic Discharge (ESD) protection exceeding 2 kV HBM (class H2). It is also AEC-Q101 qualified, indicating its suitability for use in automotive applications. These attributes, combined with the device's low on-state resistance, make it an efficient choice for power management tasks.

• Drain-Source Voltage (VDS): 60 V
• Gate-Source Voltage (VGS): ±20 V
• Drain Current (ID): 1.6 A at VGS = 10 V, 25°C
• Drain-Source On-State Resistance (RDSon): 164 to 218 mΩ at VGS = 10 V, ID = 1.6 A, 25°C
• Total Power Dissipation (Ptot): 640 mW at 25°C
• Junction Temperature (Tj): -55 to 175°C
• ESD Protection: > 2 kV HBM

• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits

N-channel MOSFETs are a type of Field-Effect Transistor (FET) that are widely used in electronic circuits for switching and amplification purposes. They operate by using an electric field to control the flow of current between the drain and source terminals. The N-channel designation refers to the type of charge carriers (electrons) that move through the channel formed between the source and drain.

When selecting an N-channel MOSFET, important considerations include the maximum drain-source voltage (VDS), the maximum current it can handle (ID), the gate-source voltage (VGS), and the drain-source on-state resistance (RDSon). These parameters determine the device's suitability for specific applications, including its efficiency and power handling capabilities.

MOSFETs are integral to modern electronics, finding applications in power conversion, motor control, and as key components in various types of electronic switches. Their ability to switch rapidly and with high efficiency makes them particularly valuable in power management and digital circuits.

For engineers, choosing the right MOSFET involves understanding the specific requirements of their application, including the operating environment, power levels, and switching speeds. The device's packaging, thermal characteristics, and any additional features such as built-in protection mechanisms may also influence the selection process.