2N7002-7-F: N-Channel MOSFET, 60V, 210mA, SOT-23, RDS(ON) 7.5Ω
Diodes Inc.

The 2N7002-7-F is an N-Channel Enhancement Mode MOSFET designed to offer low on-state resistance (RDS(ON)) while maintaining superior switching performance. This MOSFET features a maximum drain-source voltage (VDSS) of 60V, a continuous drain current (ID) of 210mA, and a maximum RDS(ON) of 7.5Ω at a gate-source voltage (VGS) of 5V. Its design is optimized for high efficiency in power management applications, combining low gate threshold voltage, low input capacitance, and fast switching speed in a small surface mount SOT-23 package.

This component is suitable for a range of applications, including motor control and power management functions, where efficient power handling and reliable performance are important. The 2N7002-7-F is manufactured by Diodes Inc. and is fully compliant with RoHS standards, making it a suitable choice for environmentally conscious applications.

Key Specifications and Features

  • Drain-Source Voltage (VDSS): 60V
  • Continuous Drain Current (ID): 210mA
  • Static Drain-Source On-Resistance (RDS(ON)): 7.5Ω at VGS=5V
  • Gate-Source Voltage (VGSS): ±20V continuous, ±40V pulsed
  • Power Dissipation (PD): 370mW at TA=25°C
  • Thermal Resistance, Junction to Ambient (RθJA): 348°C/W
  • Package: SOT-23

2N7002-7-F Datasheet

2N7002-7-F datasheet (PDF)

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Applications

  • Motor Control
  • Power Management Functions

Category

Transistor

General information

N-Channel Enhancement Mode MOSFETs are widely used in electronic circuits for their efficiency and reliability in switching applications. These components operate by allowing current to flow between the drain and source terminals when a sufficient voltage is applied to the gate terminal, effectively acting as a switch. The N-Channel designation refers to the type of charge carriers (electrons) that conduct current through the device.

When selecting an N-Channel MOSFET, engineers consider several key parameters, including the drain-source voltage (VDSS), drain current (ID), and static drain-source on-resistance (RDS(ON)). These parameters determine the MOSFET's ability to handle the voltage and current requirements of the application, as well as its efficiency. The gate-source voltage (VGSS) is also important, as it affects the voltage required to turn the device on and off.

In applications requiring efficient power management and fast switching, the low RDS(ON) and fast switching speed of the MOSFET are particularly valuable. The small package size, such as the SOT-23, is also advantageous for space-constrained designs. Additionally, compliance with environmental standards such as RoHS is often a consideration in component selection.

Overall, N-Channel MOSFETs like the 2N7002-7-F are essential for a wide range of applications, from motor control to power management functions, where efficient and reliable power switching is required.

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