2N7002: N-Channel MOSFET, 60V, 200mA, SOT-23
onsemi

The 2N7002 is a small signal N-Channel MOSFET designed and manufactured by onsemi. Utilizing onsemi's high cell density, DMOS technology, this MOSFET is engineered to deliver low on-state resistance while maintaining high switching performance and reliability. It is particularly suitable for low-voltage, low-current applications, offering an efficient solution for power MOSFET gate driving and other switching operations.

The component is encapsulated in a SOT-23 package, providing a compact footprint suitable for various electronic designs. Its design targets applications requiring efficient power management and control, such as servo motor control, where its fast switching capabilities and ruggedness are beneficial. The device is also noted for its high saturation current capability, further enhancing its performance in demanding applications.

Key Specifications and Features

  • Drain-to-Source Voltage (VDSS): 60V
  • Gate-Source Voltage (VGSS): ±20V
  • Continuous Drain Current (ID): 200mA
  • Pulsed Drain Current (IDM): 500mA
  • Power Dissipation (PD): 400mW
  • Thermal Resistance, Junction to Ambient (RθJA): 625°C/W
  • Gate Threshold Voltage (VGS(th)): 1 to 2.5V
  • Static Drain-Source On-Resistance (RDS(on)): 1.2 to 7.5Ω
  • Operating and Storage Temperature Range: -55 to 150°C

2N7002 Datasheet

2N7002 datasheet (PDF)

2N7002 Substitutes
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Applications

  • Low-voltage power management
  • Servo motor control
  • Power MOSFET gate driving
  • General-purpose switching applications

Category

Transistor

General information

N-Channel MOSFETs are fundamental components in electronic design, serving as efficient switches or amplifiers in circuits. They operate by using an electric field to control the conductivity of a 'channel', in this case, N-type semiconductor material, allowing or preventing current flow between the drain and source terminals. The gate terminal receives the control voltage.

When selecting an N-Channel MOSFET, several factors are important: the maximum drain-to-source voltage (VDSS), which indicates the maximum voltage the MOSFET can block; the drain current (ID), which is the maximum current the device can conduct; and the gate-source voltage (VGSS), which is the voltage range the gate can safely handle. Additionally, the on-state resistance (RDS(on)) is crucial as it affects the power loss and efficiency of the MOSFET in its conducting state.

Applications for N-Channel MOSFETs are vast, ranging from power management and conversion to motor control and signal amplification. Their ability to switch rapidly and with high efficiency makes them suitable for both analog and digital circuits. Engineers must consider the specific requirements of their application, including the needed current handling, voltage levels, and switching speed, to select the appropriate MOSFET.

Moreover, thermal management is a significant consideration due to the heat generated during operation. The thermal resistance and maximum junction temperature are key specifications that help ensure the MOSFET operates within safe temperature limits, preserving its reliability and longevity.

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