The BSS138BK from Nexperia is an N-channel enhancement mode Field-Effect Transistor (FET) that utilizes Trench MOSFET technology to provide high efficiency and performance in a compact SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. This component is designed for logic-level compatibility, featuring very fast switching capabilities and Electrostatic Discharge (ESD) protection up to 1.5 kV, making it suitable for a wide range of high-speed switching applications.
Key features include a drain-source voltage (VDS) of 60V, gate-source voltage (VGS) of ±20V, and a drain current (ID) of up to 360mA at 25°C ambient temperature. The BSS138BK also exhibits a low drain-source on-state resistance (RDSon) of 1 to 1.6Ω at VGS = 10V and ID = 350mA, ensuring efficient operation. Its thermal characteristics and robust design make it reliable for use in various applications, including relay drivers, low-side load switches, high-speed line drivers, and switching circuits.
Transistor
N-channel MOSFETs are a type of Field-Effect Transistor (FET) that are widely used in electronic circuits for switching and amplifying signals. They operate by using an input voltage to control the flow of current through a channel. The N-channel designation refers to the type of charge carriers (electrons) that move through the device.
When selecting an N-channel MOSFET, engineers consider parameters such as the drain-source voltage (VDS), gate-source voltage (VGS), drain current (ID), and the drain-source on-state resistance (RDSon). These parameters determine the device's ability to handle voltage, current, and power levels efficiently.
N-channel MOSFETs are favored for their high efficiency, fast switching speeds, and the ability to drive significant currents. They find applications in a variety of circuits, including power supplies, motor controllers, and electronic switches. Key considerations when choosing an N-channel MOSFET include the specific application requirements, thermal management, and the need for protection features like ESD resistance.
The BSS138BK exemplifies the use of Trench MOSFET technology, which enhances performance by reducing on-state resistance and improving switching speeds. This makes it suitable for applications requiring efficient power management and fast switching capabilities.