SQ2364EES-T1_GE3: Automotive N-Channel 60 V, 175 °C, SOT-23 MOSFET

Vishay

The SQ2364EES-T1_GE3 from Vishay is an N-Channel MOSFET designed for automotive applications, encapsulated in a compact SOT-23 package. This component is characterized by its ability to operate at high temperatures up to 175 °C, making it suitable for demanding environments. It is AEC-Q101 qualified, ensuring automotive-grade reliability and performance. The MOSFET features TrenchFET® technology, providing enhanced efficiency and reduced on-resistance.

Key attributes include a drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 2 A at 25 °C, with the ability to handle pulsed drain currents up to 8 A. It also offers robust ESD protection up to 800 V. The device's low on-resistance (RDS(on)) at various gate-source voltages highlights its efficiency in conducting current. Additionally, it is 100% Rg and UIS tested, ensuring consistent performance across all units.

• Drain-Source Voltage (VDS): 60 V
• Gate-Source Voltage (VGS): ± 8 V
• Continuous Drain Current (ID) @ 25 °C: 2 A
• Pulsed Drain Current (IDM): 8 A
• RDS(on) @ VGS = 1.5 V: 0.245 Ω
• Maximum Power Dissipation @ 25 °C: 3 W
• Operating Junction Temperature Range: -55 to +175 °C
• Package: SOT-23

• Automotive electronics
• Power management systems
• High-temperature applications

MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are a type of transistor used for amplifying or switching electronic signals. They are widely used in electronic devices due to their high efficiency, reliability, and the ability to handle significant power levels. N-Channel MOSFETs, in particular, are preferred for their high electron mobility and ease of integration into various circuits.

When selecting a MOSFET for a specific application, several factors should be considered, including the drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and the on-resistance (RDS(on)). These parameters determine the MOSFET's ability to handle the required power levels and its efficiency in the circuit. The package type also plays a crucial role in the thermal management of the device.

MOSFETs are integral in power conversion and management systems, offering solutions for efficient power distribution. They are especially valuable in applications requiring high-speed switching, low power consumption, and compact size. Automotive applications often demand MOSFETs that can operate reliably under harsh conditions, including high temperatures and voltages.

The SQ2364EES-T1_GE3 MOSFET by Vishay, with its high-temperature tolerance and automotive qualification, exemplifies the advancements in MOSFET technology, catering to the rigorous demands of automotive electronics and power management systems.