PMV37ENEAR: 60 V, N-channel Trench MOSFET, SOT23, Logic-level compatible

Nexperia

The PMV37ENEA is a 60 V N-channel enhancement mode Field-Effect Transistor (FET) that utilizes Trench MOSFET technology to provide high efficiency and performance. Packaged in a compact SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, it is designed for a wide range of applications. This component is characterized by its logic-level compatibility, allowing it to be directly driven by logic circuits without additional driver ICs. Furthermore, it supports an extended temperature range up to 175 °C, making it suitable for high-temperature environments.

With ElectroStatic Discharge (ESD) protection exceeding 2 kV HBM (class H2) and qualification according to AEC-Q101 standards, the PMV37ENEA is designed for reliability and robustness in automotive and other demanding applications. Its low on-state resistance and high efficiency make it an excellent choice for power management tasks, including relay driving, high-speed line driving, low-side load switching, and various switching circuits.

• Drain-Source Voltage (VDS): 60 V
• Gate-Source Voltage (VGS): ±20 V
• Drain Current (ID): 3.5 A at VGS = 10 V, 25 °C
• Drain-Source On-State Resistance (RDSon): 37 mΩ to 49 mΩ at VGS = 10 V, ID = 3.5 A, 25 °C
• Total Power Dissipation (Ptot): 710 mW at 25 °C
• Junction Temperature (Tj): -55 °C to 175 °C
• ESD Protection: > 2 kV HBM

• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits

N-channel MOSFETs are a type of Field-Effect Transistor (FET) widely used in electronic circuits for switching and amplifying signals. They operate by using an electric field to control the flow of current between the drain and source terminals. N-channel refers to the type of charge carrier (electrons) that conduct current in the device.

When selecting an N-channel MOSFET, engineers should consider parameters such as drain-source voltage (VDS), gate-source voltage (VGS), drain current (ID), and drain-source on-state resistance (RDSon). These parameters determine the MOSFET's suitability for different applications, including power management, signal processing, and high-frequency switching.

Trench MOSFET technology offers advantages in terms of lower on-state resistance and higher efficiency, making it suitable for applications requiring high power density and minimal heat generation. Logic-level compatibility allows for direct interfacing with microcontroller or logic circuits, simplifying the design.

In addition to electrical specifications, factors such as package type, thermal characteristics, and protection features (e.g., ESD protection) are also important. These aspects influence the MOSFET's performance in specific applications and its ability to withstand harsh operating conditions.