The T2N7002BK from Toshiba is a silicon N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed for high-speed switching applications. It is encapsulated in a compact SOT23 package, making it suitable for space-constrained applications. This MOSFET features low drain-source on-resistance (RDS(ON)) values, with typical values of 1.05 Ω at VGS = 10 V, 1.15 Ω at VGS = 5.0 V, and 1.2 Ω at VGS = 4.5 V, providing efficient operation and minimizing power losses during operation.
The T2N7002BK supports a drain-source voltage (VDSS) of up to 60 V and can handle continuous drain currents (ID) up to 400 mA, with pulsed drain currents (IDP) up to 1200 mA. Its robust design includes features to ensure reliability and durability under various operating conditions, including a channel temperature range up to 150°C. The device also offers fast switching times and low gate charge, making it well-suited for high-frequency applications. It is important to note that, like all MOSFETs, the T2N7002BK is sensitive to electrostatic discharge and should be handled with appropriate precautions.
MOSFET
MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are a type of transistor used for amplifying or switching electronic signals. They are an essential component in a wide range of electronic devices due to their high efficiency and fast switching capabilities. N-Channel MOSFETs, such as the T2N7002BK, are typically used in applications requiring efficient power management and high-speed switching.
When selecting a MOSFET for a specific application, several key parameters must be considered, including the drain-source voltage (VDSS), drain current (ID), power dissipation (PD), and drain-source on-resistance (RDS(ON)). The gate threshold voltage (Vth) and gate charge are also important factors that affect the switching performance and efficiency of the MOSFET.
MOSFETs are widely used in power conversion and management applications, including DC-DC converters, power supplies, and motor control circuits. Their ability to efficiently switch at high speeds makes them suitable for high-frequency applications. However, it is important to consider the thermal management and electrostatic discharge (ESD) sensitivity of MOSFETs during design and handling.
Overall, the selection of a MOSFET should be based on a thorough understanding of the application requirements and a careful review of the component's specifications. This ensures optimal performance and reliability in the final electronic design.