2N7002ET7G: N-Channel MOSFET, 60V, 310mA, SOT-23, Low RDS(on)
onsemi

The 2N7002ET7G is an N-Channel MOSFET by onsemi, designed for efficient power management and switching applications. It features a drain-to-source voltage (VDS) of 60V and a maximum continuous drain current (ID) of 310mA, making it suitable for a variety of low-power applications. This component utilizes trench technology to achieve low on-resistance (RDS(on)) values of 2.5Ω at 10V and 3.0Ω at 4.5V, ensuring efficient operation and reduced power dissipation.

Its compact SOT-23 package is optimized for surface mount technology, allowing for high-density PCB layouts. The 2N7002ET7G is AEC-Q101 qualified and PPAP capable, indicating its reliability and suitability for automotive applications. Additionally, it is Pb-free, halogen-free/BFR-free, and RoHS compliant, making it a environmentally friendly choice for electronic designs.

Key Specifications and Features

  • Drain-to-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 310mA
  • On-Resistance (RDS(on)): 2.5Ω at 10V, 3.0Ω at 4.5V
  • Gate-to-Source Voltage (VGS): ±20V
  • Power Dissipation: 300mW steady state, 420mW for <5s
  • Operating Junction Temperature Range: -55°C to +150°C
  • Package: SOT-23

2N7002ET7G Datasheet

2N7002ET7G datasheet (PDF)

2N7002ET7G Substitutes
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Applications

  • Low side load switch
  • Level shift circuits
  • DC-DC converters
  • Portable applications (e.g., digital cameras, PDAs, cell phones)

Category

MOSFET

General information

MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are a type of transistor used for amplifying or switching electronic signals. They are an essential component in a wide range of electronic devices due to their high efficiency and fast switching capabilities. N-Channel MOSFETs, such as the 2N7002ET7G, are typically used in applications where load currents need to be controlled by a voltage applied to the gate terminal.

When selecting a MOSFET for a particular application, several parameters are important to consider, including the drain-to-source voltage (VDS), gate-to-source voltage (VGS), continuous drain current (ID), and on-resistance (RDS(on)). These parameters determine the MOSFET's ability to handle the required power levels and its efficiency in the circuit.

The package type also plays a significant role in the component's performance, particularly in terms of thermal management and footprint on the PCB. For applications requiring high reliability, such as automotive or industrial, it is also important to consider the component's compliance with industry standards and qualifications.

Overall, the choice of a MOSFET will significantly impact the performance, efficiency, and reliability of the electronic device it is used in. Therefore, a thorough understanding of the component's specifications and how they align with the application's requirements is crucial for optimal design.

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