PMV37ENER: 60V, N-channel Trench MOSFET, SOT23, Logic-level compatible
Nexperia

The PMV37ENER from Nexperia is a N-channel enhancement mode Field-Effect Transistor (FET) designed for high efficiency and reliability in power switching applications. Utilizing advanced Trench MOSFET technology, it offers superior performance in a compact SOT23 Surface-Mounted Device (SMD) plastic package. This component is characterized by its logic-level compatibility, allowing it to be driven directly by microcontroller outputs without the need for additional driver circuits.

The device is designed to operate over an extended temperature range, with a maximum junction temperature (Tj) of 175 °C, ensuring reliability under harsh conditions. It also includes ElectroStatic Discharge (ESD) protection exceeding 2 kV HBM (class H2), safeguarding the device during handling and operation. With its low on-state resistance and high current handling capability, the PMV37ENER is suitable for a wide range of applications including relay drivers, high-speed line drivers, low-side load switches, and various switching circuits.

Key Specifications and Features

  • Drain-Source Voltage (VDS): 60 V
  • Gate-Source Voltage (VGS): ±20 V
  • Drain Current (ID): 3.5 A at VGS = 10 V, Tamb = 25 °C
  • Drain-Source On-State Resistance (RDSon): 37 to 49 mΩ at VGS = 10 V, ID = 3.5 A
  • Extended Temperature Range: Tj = 175 °C
  • ESD Protection: > 2 kV HBM (class H2)
  • Package: SOT23

PMV37ENER Substitutes
Equivalent alternate parts that may serve as a substitute for PMV37ENER, most popular parts first

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits

Category

Transistor

General information

Field-Effect Transistors (FETs) are semiconductor devices widely used for switching and amplifying electronic signals in various applications. N-channel MOSFETs, such as the PMV37ENER, are a type of FET that allows current to flow when a positive voltage is applied to the gate terminal, making them suitable for high-speed switching applications. Trench MOSFET technology further enhances performance by reducing on-state resistance and improving efficiency.

When selecting a MOSFET for a specific application, engineers should consider parameters such as drain-source voltage (VDS), gate-source voltage (VGS), drain current (ID), and on-state resistance (RDSon). Additionally, the device's thermal characteristics and ESD protection level are important for ensuring reliability and longevity in the intended application environment.

The PMV37ENER's logic-level compatibility is particularly beneficial, allowing for direct interfacing with microcontroller outputs. This feature, combined with its extended temperature range and robust ESD protection, makes the PMV37ENER an excellent choice for designing reliable and efficient power switching circuits in compact spaces.

Overall, the PMV37ENER exemplifies the advancements in MOSFET technology, offering engineers a high-performance, reliable solution for a wide range of power switching applications.

PartsBox Popularity Index

  • Business: 2/10
  • Hobby: 0/10

Electronic Component Database

Popular electronic components