2N7002K-7: N-Channel Enhancement Mode MOSFET, 60V, 380mA, SOT23
Diodes Inc.

The 2N7002K-7 from Diodes Inc. is an N-Channel Enhancement Mode MOSFET designed for efficient power management and motor control applications. It comes in a compact SOT23 package, making it suitable for high-density PCB layouts. This MOSFET is characterized by its low on-state resistance (RDS(ON)) and fast switching capabilities, which are crucial for minimizing power losses and improving overall system efficiency.

With a maximum drain-source voltage (VDSS) of 60V and a continuous drain current (ID) capability of up to 380mA at 25°C, the 2N7002K-7 is well-suited for a wide range of applications. It also features low input and output leakage currents, ensuring minimal power wastage when in the off state. The device is ESD protected up to 2kV, providing additional reliability and robustness in harsh environments.

Key Specifications and Features

  • Drain-Source Voltage (VDSS): 60V
  • Continuous Drain Current (ID): 380mA at 25°C
  • Static Drain-Source On-Resistance (RDS(ON)): 2Ω at VGS = 10V
  • Gate-Source Voltage (VGSS): ±20V
  • Maximum Power Dissipation (PD): 370mW
  • Operating Temperature Range: -55 to +150°C
  • Package: SOT23

2N7002K-7 Datasheet

2N7002K-7 datasheet (PDF)

2N7002K-7 Substitutes
Equivalent alternate parts that may serve as a substitute for 2N7002K-7, most popular parts first

Applications

  • Motor Control
  • Power Management Functions
  • Backlighting

Category

MOSFET

General information

N-Channel Enhancement Mode MOSFETs are semiconductor devices that are widely used in electronic circuits for switching and amplification purposes. These components operate by utilizing an electric field to control the conductivity of a channel in a semiconductor material, allowing or blocking the flow of current.

When selecting an N-Channel MOSFET, engineers should consider several key parameters such as the drain-source voltage (VDSS), continuous drain current (ID), and static drain-source on-resistance (RDS(ON)). These parameters determine the MOSFET's ability to handle the voltage and current levels in a given application, as well as its efficiency and thermal performance.

Additionally, the switching speed, input capacitance, and packaging are also important factors. Fast switching speeds are desirable for reducing switching losses, while low input capacitance helps in achieving higher operating frequencies. The package type influences the thermal management and physical integration of the MOSFET into the circuit.

N-Channel MOSFETs are commonly used in power supply circuits, motor control applications, and as switching elements in various electronic devices. Their ability to efficiently control high currents and voltages while minimizing power losses makes them essential components in modern electronic design.

PartsBox Popularity Index

  • Business: 4/10
  • Hobby: 2/10

Electronic Component Database

Popular electronic components