IRLML2060TRPBF: HEXFET Power MOSFET, 60V, 1.2A, RDS(on) max 480mΩ @ 10V
Infineon

The IRLML2060TRPBF is a HEXFET Power MOSFET designed by Infineon for efficient power management in electronic circuits. It operates at a drain-source voltage (VDS) of 60V and can handle a continuous drain current (ID) of 1.2A at a gate-source voltage (VGS) of 10V. The device features a maximum static drain-to-source on-resistance (RDS(on)) of 480mΩ at VGS = 10V, increasing to 640mΩ at VGS = 4.5V, ensuring efficient operation with minimal power loss.

This MOSFET is compatible with existing surface mount techniques, making it easy to incorporate into various designs. It is designed with an industry-standard pinout, ensuring multi-vendor compatibility. Its RoHS compliance indicates it contains no lead, bromide, or halogen, making it an environmentally friendly choice for power switching applications. The IRLML2060TRPBF is suitable for a wide range of applications, including load/system switches, due to its robust performance and reliability.

Key Specifications and Features

  • VDS (Drain-Source Voltage): 60V
  • ID (Continuous Drain Current) @ TA = 25°C: 1.2A
  • RDS(on) (Static Drain-to-Source On-Resistance) @ VGS = 10V: 480mΩ
  • VGS (Gate-to-Source Voltage) Max: ±16V
  • PD (Maximum Power Dissipation) @ TA = 25°C: 1.25W
  • TJ, TSTG (Junction and Storage Temperature Range): -55 to +150°C

IRLML2060TRPBF Datasheet

IRLML2060TRPBF datasheet (PDF)

IRLML2060TRPBF Substitutes
Equivalent alternate parts that may serve as a substitute for IRLML2060TRPBF, most popular parts first

Applications

  • Load/System Switch

Category

Power MOSFET

General information

Power MOSFETs are fundamental components in electronic circuits for controlling the flow of electrical power. They operate as switches or amplifiers, efficiently managing power distribution in a wide range of applications, from consumer electronics to industrial systems. When choosing a Power MOSFET, important considerations include the maximum drain-source voltage (VDS), the continuous drain current (ID), the gate-source voltage (VGS), and the static drain-to-source on-resistance (RDS(on)). These parameters determine the MOSFET's ability to handle the required power levels with minimal losses.

The IRLML2060TRPBF, designed by Infineon, exemplifies a high-performance Power MOSFET suitable for load/system switching applications. It features a low on-resistance, ensuring efficient power management and minimal heat generation. Engineers should also consider the package type for thermal management and compatibility with existing manufacturing processes. Furthermore, environmental compliance, such as RoHS, is crucial for ensuring the component's suitability for global markets. In summary, selecting the right Power MOSFET involves balancing performance, efficiency, thermal management, and compliance with environmental standards.

PartsBox Popularity Index

  • Business: 2/10
  • Hobby: 1/10

Electronic Component Database

Popular electronic components