The PMV90ENE by Nexperia is a 30 V, N-channel Trench MOSFET, designed for use in a variety of applications requiring efficient power control and conversion. It is encapsulated in a compact SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, utilizing advanced Trench MOSFET technology to achieve high performance in a small footprint.
This MOSFET is characterized by its logic level compatibility, allowing it to be directly driven by logic circuits without the need for additional driver components. It also features very fast switching capabilities, enhancing its suitability for high-speed and high-frequency applications. The device includes ElectroStatic Discharge (ESD) protection exceeding 2 kV HBM, safeguarding it against damage from static discharges.
Transistor
N-channel Trench MOSFETs are a type of Field-Effect Transistor (FET) that utilize a trench gate structure to achieve higher density and efficiency compared to traditional planar MOSFETs. These components are widely used in power conversion and management applications due to their ability to efficiently control power flow in circuits.
When selecting an N-channel Trench MOSFET, engineers should consider parameters such as drain-source voltage (VDS), gate-source voltage (VGS), drain current (ID), and drain-source on-state resistance (RDSon). These parameters determine the MOSFET's ability to handle the required power levels and switching frequencies in a given application.
Additionally, the package type and thermal characteristics are important considerations. The SOT23 package is popular for its compact size, making it suitable for space-constrained applications. Thermal management is crucial in preventing overheating and ensuring reliable operation under various conditions.
Lastly, features such as logic level compatibility and ESD protection are beneficial in simplifying circuit design and enhancing the durability of the component.