The 2N7002P,235 by Nexperia is a N-channel enhancement mode Field-Effect Transistor (FET) that utilizes Trench MOSFET technology. Packaged in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, it offers a compact solution for various applications. This component is designed to operate as a high-speed line driver, relay driver, low-side load switch, and in switching circuits, among other applications.
It features a drain-source voltage (VDS) of 60 V, a gate-source voltage (VGS) range of -20 to 20 V, and a continuous drain current (ID) of up to 360 mA at 25°C. The device is characterized by its fast switching capabilities and logic-level compatibility, making it suitable for a wide range of electronic circuits. The 2N7002P,235 is also AEC-Q101 qualified, indicating its reliability for automotive applications.
Transistor
N-channel MOSFETs are a type of Field-Effect Transistor (FET) that are widely used in electronic circuits for switching and amplifying signals. They operate by using an electric field to control the flow of current between the drain and source terminals, which is modulated by the voltage applied to the gate terminal. N-channel refers to the type of charge carrier (electrons) that conduct current in the device.
When selecting an N-channel MOSFET, several key parameters should be considered, including the drain-source voltage (VDS), gate-source voltage (VGS), and drain current (ID). These parameters determine the power handling capability and efficiency of the MOSFET in a circuit. The on-state resistance (RDSon) is also an important factor, as it affects the power loss and heat generation when the MOSFET is conducting.
Applications of N-channel MOSFETs are diverse, ranging from power management in portable devices to driving motors in industrial applications. Their fast switching capabilities make them suitable for high-speed switching applications, such as in power converters and inverters.
Engineers should also consider the thermal characteristics of the MOSFET, including the thermal resistance and maximum junction temperature, to ensure reliable operation under various operating conditions. Packaging options, such as the SOT23 package, offer a compact solution for space-constrained applications.