T2N7002BK,LM(T: N-Channel MOSFET, 60V, 400mA, SOT23, RDS(ON) 1.05Ω
Toshiba

The T2N7002BK is a Silicon N-Channel MOSFET designed for high-speed switching applications. It features a low drain-source on-resistance (RDS(ON)) of 1.05 Ω (typical) at VGS = 10V, making it suitable for efficient power management in various circuits. The component is packaged in a compact SOT23 form, facilitating easy integration into space-constrained designs.

This MOSFET supports a drain-source voltage (VDSS) of up to 60V and can handle a continuous drain current (ID) of up to 400mA, with pulsed drain current capability up to 1200mA. It also incorporates ESD protection with an HBM level of 2 kV, enhancing its reliability in sensitive environments. The T2N7002BK is optimized for performance with a range of gate-source voltages, showing versatility in different operating conditions.

Key Specifications and Features

  • Drain-Source Voltage (VDSS): 60V
  • Gate-Source Voltage (VGSS): ±20V
  • Continuous Drain Current (ID): 400mA
  • Pulsed Drain Current (IDP): 1200mA
  • Drain-Source On-Resistance (RDS(ON)): 1.05 Ω (typ.) at VGS = 10V
  • Power Dissipation (PD): 320 mW to 1000 mW
  • Channel Temperature (Tch): 150°C
  • ESD Protection: HBM level 2 kV

T2N7002BK,LM(T Substitutes
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Applications

  • High-speed switching applications

Category

MOSFET

General information

MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are a fundamental component in electronic design, offering high efficiency and reliability for switching and amplification tasks. They operate by voltage controlling the conductivity between the drain and source terminals, making them essential for power management, signal processing, and more.

When selecting a MOSFET, key parameters include the drain-source voltage (VDSS), drain current (ID), gate-source voltage (VGSS), and drain-source on-resistance (RDS(ON)). These parameters determine the MOSFET's ability to handle high voltages, currents, and its efficiency. Additionally, packaging, thermal management, and ESD protection level are important considerations.

For high-speed switching applications, a MOSFET with low RDS(ON) is preferred to minimize power loss and heat generation. The choice of gate-source voltage (VGSS) range also affects the compatibility with driving circuits. Moreover, understanding the thermal characteristics and ensuring adequate heat dissipation are critical for reliable operation.

In summary, choosing the right MOSFET involves a careful analysis of electrical characteristics, thermal properties, and application requirements. MOSFETs like the T2N7002BK, with its low RDS(ON) and robust protection features, offer a compelling option for engineers looking to optimize their designs for performance and reliability.

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