2N7002BK,215: 60 V, 350 mA N-channel Trench MOSFET, SOT23 package

Nexperia

The 2N7002BK from Nexperia is an N-channel enhancement mode Field-Effect Transistor (FET) that utilizes Trench MOSFET technology. It is packaged in a compact SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, designed for logic level applications with very fast switching capabilities. The component is equipped with ESD protection up to 2 kV, ensuring robust performance in various applications.

This MOSFET is characterized by a drain-source voltage (VDS) of 60 V and a drain current (ID) of 350 mA at 25°C, with a gate-source voltage (VGS) of ±20 V. The drain-source on-state resistance (RDSon) is specified between 1 and 1.6 Ω at a gate-source voltage of 10 V and a drain current of 500 mA. Its thermal characteristics and dynamic parameters, including total gate charge and input/output capacitance, are optimized for high-speed switching applications.

• Drain-Source Voltage (VDS): 60 V
• Drain Current (ID): 350 mA at 25°C
• Gate-Source Voltage (VGS): ±20 V
• Drain-Source On-State Resistance (RDSon): 1 to 1.6 Ω at VGS = 10 V, ID = 500 mA
• Total Power Dissipation (Ptot): 370 mW at 25°C
• Junction Temperature (Tj): 150 °C
• ESD Protection: Up to 2 kV
• Package: SOT23 (TO-236AB)

• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits

N-channel MOSFETs are a type of Field-Effect Transistor (FET) that are predominantly used for switching and amplifying electronic signals in various types of electronic devices. They operate by using an electric field to control the flow of current between the source and drain terminals. N-channel refers to the type of charge carrier (electrons) that flow through the device.

When selecting an N-channel MOSFET, engineers should consider parameters such as drain-source voltage (VDS), drain current (ID), gate-source voltage (VGS), and the drain-source on-state resistance (RDSon). Other important factors include the device's power dissipation capabilities, thermal resistance, and any protective features such as ESD protection.

MOSFETs are integral in the design of power supply circuits, motor control circuits, and as switches in various electronic devices. Their ability to switch rapidly makes them suitable for high-speed and high-frequency applications. The choice of packaging (e.g., SOT23) is also crucial, affecting the thermal management and overall footprint of the component in a circuit design.

Overall, the selection of an N-channel MOSFET should be guided by the specific requirements of the application, including the operating voltage and current levels, switching speed, thermal considerations, and packaging constraints.