2N7002ET1G: N-Channel MOSFET, 60V, 310mA, SOT-23, Low RDS(on)
onsemi

The 2N7002ET1G is an N-Channel MOSFET designed for efficient power management and signal processing in a wide range of applications. This device utilizes trench technology to achieve low on-resistance (RDS(on)) and high switching performance, making it suitable for high-efficiency power conversion and control. The small SOT-23 package allows for compact designs in space-constrained applications.

With a maximum drain-to-source voltage of 60V and a continuous drain current of 310mA, the 2N7002ET1G is capable of handling moderate power levels. Its low threshold voltage ensures easy drive from logic circuits, enhancing its compatibility with a variety of control interfaces. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications and other stringent environments.

Key Specifications and Features

  • Drain-to-Source Voltage (VDSS): 60V
  • Gate-to-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 310mA
  • Power Dissipation: 300mW
  • RDS(on): 2.5Ω at 10V, 3.0Ω at 4.5V
  • Junction-to-Ambient Thermal Resistance (RθJA): 417°C/W steady state
  • Operating Junction Temperature Range: -55°C to +150°C
  • Input Capacitance (CISS): 40pF
  • Total Gate Charge (QG(TOT)): 0.81nC

2N7002ET1G Datasheet

2N7002ET1G datasheet (PDF)

2N7002ET1G Substitutes
Equivalent alternate parts that may serve as a substitute for 2N7002ET1G, most popular parts first

Applications

  • Low side load switch
  • Level shift circuits
  • DC-DC converters
  • Portable applications (e.g., digital cameras, PDAs, cell phones)

Category

Transistors

General information

MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are a fundamental component in electronic circuits, acting as efficient switches or amplifiers. They are widely used in power conversion and management, signal processing, and as load drivers in various applications. MOSFETs offer high input impedance and low output impedance, making them highly efficient for switching applications.

When selecting a MOSFET, engineers should consider the device's maximum voltage and current ratings, RDS(on) for power efficiency, switching speed, and thermal performance. The packaging is also important for physical integration into the circuit. MOSFETs are available in various types, such as N-channel for high-speed switching and P-channel for easier drive capability.

The 2N7002ET1G, with its low RDS(on) and compact SOT-23 package, is an example of a MOSFET designed for efficient switching and power management in both automotive and portable device applications. Its trench technology and low threshold voltage make it suitable for high-efficiency applications.

For applications requiring high reliability, such as automotive, selecting a MOSFET that is AEC-Q101 qualified and PPAP capable, like the 2N7002ET1G, ensures that the component meets stringent quality standards. Understanding the thermal characteristics and ensuring adequate heat dissipation are also crucial to prevent overheating and ensure long-term reliability.

PartsBox Popularity Index

  • Business: 3/10
  • Hobby: 1/10

Electronic Component Database

Popular electronic components