2N7002KT1G: N-Channel SOT-23 MOSFET, 60V, 380mA, Low RDS(on)
onsemi

The 2N7002KT1G from onsemi is a small-signal N-Channel MOSFET designed for high-efficiency applications. Packaged in a compact SOT-23 form factor, this MOSFET supports a drain-to-source voltage (VDSS) of up to 60V and a maximum drain current (ID) of 380mA. It is characterized by a low on-resistance (RDS(on)) that varies between 1.6Ω at 10V and 2.5Ω at 4.5V, enhancing the component's overall efficiency in circuit designs.

This component is designed with protection against electrostatic discharge (ESD), ensuring reliability and durability in sensitive applications. Its low RDS(on) contributes to reduced power dissipation, making it suitable for applications where power efficiency is critical. The 2N7002KT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications and other scenarios that require stringent quality and reliability standards.

Key Specifications and Features

  • Drain-to-Source Voltage (VDSS): 60V
  • Drain Current (ID MAX): 380mA at 25°C
  • RDS(on): 1.6Ω at 10V, 2.5Ω at 4.5V
  • Gate-to-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 420mW
  • ESD Protection: 2000V

2N7002KT1G Datasheet

2N7002KT1G datasheet (PDF)

2N7002KT1G Substitutes
Equivalent alternate parts that may serve as a substitute for 2N7002KT1G, most popular parts first

Applications

  • Low Side Load Switch
  • Level Shift Circuits
  • DC-DC Converters
  • Portable Applications (e.g., Digital Still Cameras, PDAs, Cell Phones)

Category

MOSFET

General information

MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are a fundamental component in electronic circuits, acting as switches or amplifiers. They are favored for their high efficiency, fast switching speeds, and ease of integration into various circuit designs. N-Channel MOSFETs, in particular, are widely used in power conversion and management applications due to their ability to efficiently handle significant power levels.

When selecting a MOSFET for a specific application, engineers consider parameters such as the drain-to-source voltage (VDSS), drain current (ID), and on-resistance (RDS(on)). The VDSS parameter indicates the maximum voltage the MOSFET can block when off, while the ID parameter specifies the maximum current it can handle when on. The RDS(on) value is critical for assessing power losses during operation, with lower values indicating higher efficiency.

In addition to these parameters, the package type and thermal characteristics are also important considerations, as they affect the MOSFET's ability to dissipate heat and maintain performance under various operating conditions. Protection features like ESD resistance are also crucial for ensuring the reliability and longevity of the component in sensitive applications.

The 2N7002KT1G MOSFET by onsemi exemplifies these considerations, offering a balance of performance, efficiency, and reliability for a wide range of applications, including automotive and portable devices.

PartsBox Popularity Index

  • Business: 3/10
  • Hobby: 1/10

Electronic Component Database

Popular electronic components